This device contains four independent gates each of which performs the logic NOR function

datasheet here<---------

-MEDIUM-SPEED OPERATION.
-FULLY STATIC OPERATION.
-COMMON RESET.
-BUFFERED INPUTS AND OUTPUTS.
-QUIESCENT CURRENT SPECIFIED TO 20VFOR HCC DEVICE.
-STANDARDIZED SYMMETRICAL OUTPUT.CHARACTERISTICS.
-5V, 10V, AND 15V PARAMETRIC RATINGS.
-INPUT CURRENT OF 100nA AT 18V AND25°C FOR HCC DEVICE.
-100% TESTED FOR QUIESCENT CURRENT.
-MEETS ALL REQUIREMENTS OF JEDEC TEN-TATIVE STANDARD No. 13A, ”STANDARDSPECIFICATIONS FOR DESCRIPTION OF ”B”SERIES CMOS DEVICES

datasheet here<---------

The MC14069UB hex inverter is constructed with MOS P−channeland N−channel enhancement mode devices in a single monolithicstructure. These inverters find primary use where low powerdissipation and/or high noise immunity is desired. Each of the sixinverters is a single stage to minimize propagation delays.

datasheet here<---------

As you've already realized we love make the things simple...
This is a way i prefer to protect some circuits and varius loads from a reversed battery...

We all make mistakes so a protection is n

general purpose diode

datasheet here<---------

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits

datsheet here<-----------

This is  a simple circuit based on the famous 555 timer...
With this circuit you can control any load you want but consider first the switching component that the 555 will control....
The n-channel mosfet buz11 can handle 30A and up to 50volts...
You can operate the device connected on the switching component from 5% to 95%.